A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

Ruonan Han , Yaming Zhang , Dominique Coquillat (1) , Hadley Videlier , Wojciech Knap (1) , Elliott Brown , K. O. Kenneth

1 L2C - Laboratoire Charles Coulomb

A 2 x 2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna (255 x 250 mu m(2)) is fabricated in a 130-nm logic CMOS process. The series resistance of diode is minimized using poly-gate separation (PGS), and exhibits a cut-off frequency of 2 THz. Each detector unit can detect an incident carrier with 100-Hz similar to 2-MHz amplitude modulation. At 1-MHz modulation frequency, the estimated voltage responsivity and noise equivalent power (NEP) of the detector unit are 250 V/W and 33 pW/Hz(1/2), respectively. An integrated low-noise amplifier further boosts the responsivity to 80 kV/W. At supply voltage of 1.2 V, the entire chip consumes 1.6 mW. The array occupies 1.5 x 0.8 mm(2). A set of millimeter-wave images with a signal-noise ratio of 48 dB is formed using the detector. These suggest potential utility of Schottky diode detectors fabricated in CMOS for millimeter wave and sub-millimeter wave imaging.

Mots clés: CMOS; detector; imaging; NEP; on-chip patch antenna; responsivity; Schottky barrier diode; terahertz

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Ruonan Han, Yaming Zhang, Dominique Coquillat, Hadley Videlier, Wojciech Knap, et al.. A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS. IEEE Journal of Solid-State Circuits, 2011, 46 (11), pp.2602-2612. ⟨10.1109/JSSC.2011.2165234⟩. ⟨hal-00814188⟩