Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates

Sylvie Contreras (1) , Wilfried Desrat (1) , Leszek Konczewicz (1)

1 Matériaux, Composants, Capteurs et Biocapteurs

We present magneto-transport measurements performed on three AlGaN/AlN/GaN heterostructures up to 14 T for various temperatures in the range 4-300 K. The obtained longitudinal and Hall conductivities are processed by mobility spectrum algorithms in order to extract the number and type of carriers in the samples. A single carrier is found in the whole structure in agreement with the first subband occupancy of the triangular quantum well which forms at the AlN/GaN interface. The temperature dependences of the density and mobility of the two dimensional electron gas are plotted for all three samples and compared with respect to their layer structures.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Sylvie Contreras, Wilfried Desrat, Leszek Konczewicz. Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates. EXMATEC 2012, May 2012, Ile de Porquerolles, France. ⟨hal-00806216⟩