Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.

Pierre Corfdir (1) , Jean-Daniel Ganière (1) , J. Ristic (2) , Pierre Lefebvre (3) , B. Deveaud (4) , E. Calleja (5)

1 Institute of Condensed Matter Physics [Lausanne]
2 Institut de Photonique et d'Electronique Quantiques
3 L2C - Laboratoire Charles Coulomb
4 Laboratoire d'Optoélectronique Quantique
5 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM

We present time-resolved PL spectroscopy of GaN nanocolumns grown by MBE on Si substrates.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Corfdir, Jean-Daniel Ganière, J. Ristic, Pierre Lefebvre, B. Deveaud, et al.. Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.. Meeting annuel de la Société Suisse de Physique., Mar 2008, Genève, Switzerland. ⟨hal-00797191⟩