Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

V. Darakchieva , K. Lorenz , M. -Y. Xie , E. Alves , W. J. Schaff , T. Yamaguchi , Y. Nanishi , Sandra Ruffenach (1) , Matthieu Moret (1) , Olivier Briot (1)

1 L2C - Laboratoire Charles Coulomb

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Mots clés: STRAIN; FILMS; MBE; hydrogen; InN; nonpolar surfaces; unintentional doping; MOLECULAR-BEAM EPITAXY; GROWTH; NITRIDE; SAPPHIRE; BUFFER

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V. Darakchieva, K. Lorenz, M. -Y. Xie, E. Alves, W. J. Schaff, et al.. Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN. E-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩. ⟨hal-00698910⟩