Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications

Hervé Peyre (1) , Jianwu Sun (1, 2) , Jude Guelfucci (1) , Sandrine Juillaguet (1) , J. Hassan (2) , Anne Henry (2) , Sylvie Contreras (1) , Pierre Brosselard (3) , Jean Camassel (1)

1 L2C - Laboratoire Charles Coulomb
2 IFM - Department of Physics, Chemistry and Biology [Linköping]
3 AMPERE - Ampère

Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 10^17 to 10^19 cm^-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+ (emitters) and p++ (contact) layers for power device applications.

Mots clés: 4H-SiC; Al doping; Hot-wall CVD; Low temperature photoluminescence

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Hervé Peyre, Jianwu Sun, Jude Guelfucci, Sandrine Juillaguet, J. Hassan, et al.. Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications. HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩. ⟨hal-00655897⟩