Terahertz Detection by Field Effect Transistors for Security Imaging

Wojciech Knap (1) , Frederic Teppe (1) , Christophe Consejo (1) , Boris Chenaud (1) , J. Torres (2, 3) , Pierre Solignac (1) , Z. R. Wasilewski , Maksim Zholudev , Nina Diakonova (1) , Dominique Coquillat (1) , Petre Buzatu (1) , Abdel El Fatimy , F. Schuster , Hadley Videlier , M. Sakowicz , B. Giffard , T. Skotnicki , F. Palma

1 L2C - Laboratoire Charles Coulomb
2 IES - Institut d’Electronique et des Systèmes
3 TéHO - Térahertz, hyperfréquence et optique

In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.

Mots clés: PLASMA; RADIATION

Domaines: Physique Générale [physics.gen-ph]

Wojciech Knap, Frederic Teppe, Christophe Consejo, Boris Chenaud, J. Torres, et al.. Terahertz Detection by Field Effect Transistors for Security Imaging. TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE, Apr 2011, Orlando, United States. pp.802307, ⟨10.1117/12.883661⟩. ⟨hal-00638519⟩