Broadband terahertz imaging with highly sensitive silicon CMOS detectors

Franz Schuster , Dominique Coquillat (1) , Hadley Videlier (1) , Maciej Sakowicz , Frederic Teppe (1) , Laurent Dussopt , Benoit Giffard , Thomas Skotnicki , Wojciech Knap (1)

1 L2C - Laboratoire Charles Coulomb

This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from similar to 0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging. (C) 2011 Optical Society of America

Mots clés: FIELD-EFFECT TRANSISTORS; PLASMA-WAVE DETECTION; SUB-TERAHERTZ; RADIATION

Domaines: Physique Générale [physics.gen-ph]

Franz Schuster, Dominique Coquillat, Hadley Videlier, Maciej Sakowicz, Frederic Teppe, et al.. Broadband terahertz imaging with highly sensitive silicon CMOS detectors. Optics Express, 2011, 19 (8), pp.7827-7832. ⟨10.1364/OE.19.007827⟩. ⟨hal-00638518⟩