Free electron properties and hydrogen in InN grown by MOVPE

V. Darakchieva , M. -Y. Xie , D. Rogalla , H. -W. Becker , K. Lorenz , E. Alves , Sandra Ruffenach (1) , Matthieu Moret (1) , Olivier Briot (1)

1 L2C - Laboratoire Charles Coulomb

In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state-of-the-art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n-type doping in MOVPE InN. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Mots clés: free electron properties; hydrogen; InN; unintentional doping; FILMS; ELLIPSOMETRY; ANISOTROPY; NITRIDE; STRAIN

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V. Darakchieva, M. -Y. Xie, D. Rogalla, H. -W. Becker, K. Lorenz, et al.. Free electron properties and hydrogen in InN grown by MOVPE. ISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩. ⟨hal-00633877⟩