Strain-Fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers.

S-A. Said-Hassani , R. Triboulet (1) , Pierre Bigenwald (2) , B. Gil (3) , A. Lusson (4) , V. Sallet

1 IGH - Institut de génétique humaine
2 LASMEA - Laboratoire des sciences et matériaux pour l'électronique et d'automatique
3 L2C - Laboratoire Charles Coulomb
4 GEMAC - Groupe d'Etude de la Matière Condensée

We examine the influence of strain fields in ZnO epilayers. We show that a reversal of the nature of the fundamental valence band can be observed similarily to what was reported in GaN epilayers.

Domaines: Sciences de l'ingénieur [physics]

S-A. Said-Hassani, R. Triboulet, Pierre Bigenwald, B. Gil, A. Lusson, et al.. Strain-Fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers.. Japanese Journal of Applied Physics, 2001, pp.L1095. ⟨10.1143/JJAP.40.L1089⟩. ⟨hal-00272501⟩